About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Theory for toggle magnetic random access memory: The asymmetric case
Abstract
A single domain model is used to analyze the magnetic switching of two coupled magnetic layers, relevant for toggle magnetic random access memory, for the nonideal case where the layers are not identical. In general, we show that discontinuous transitions occur across the critical switching curve and continuous transitions occur around cusps in the critical switching curve. We illustrate this with examples of thickness imbalance, anisotropy mismatch, and Ńel coupling and derive the corresponding switching behavior. Features in the direct-write switching can be used to experimentally distinguish between these various sources of asymmetry. © 2007 American Institute of Physics.