About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
Abstract
For CoFeBMgO -based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1 V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet. © 2009 American Institute of Physics.