PaperOxide-Charge-Induced Impurity Level in Silicon Inversion LayersA. Hartstein, A.B. FowlerPhysical Review Letters
PaperPressure dependence of barrier heights in GeSingle Bond signGaAs n - N heterojunctionsW.E. Howard, A.B. Fowler, et al.Journal of Applied Physics
PaperThe field-effect interface conductance in Ge - GaAs n-n HeterojunctionsL. Esaki, W.E. Howard, et al.Applied Physics Letters