Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The current-voltage characteristics of a single tunneling barrier are studied on a two-dimensional electron gas at millikelvin temperatures. As the impedance of the leads is gradually increased, the zero-bias differential resistance of the barrier increases and the tunneling current at low bias is suppressed (Coulomb blockade) in a power-law fashion. The data are in a quantitative agreement with the model in which quantum fluctuations of the environment enhance the tunneling rate. The linear I-V found at the lowest bias signalizes the breakdown of the simple theory, probably due to disorder. © 1993 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
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SPIE Advances in Semiconductors and Superconductors 1990
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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INFOS 2005