The Frequency Behavior of InGaAs/AlInAs Metal - Semiconductor - Metal Photodetectors at Low Bias Voltages for Data Communication Applications

Abstract

We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications. © 1992 IEEE