S. Chang, I.M. Vitomirov, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. We demonstrate multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are a viable candidate for long wavelength data communication applications. © 1992 IEEE
S. Chang, I.M. Vitomirov, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
G.D. Pettit, W.J. Turner
Journal of Applied Physics
R.A. Haring, M.S. Milshtein, et al.
VLSI Circuits 1996
M.R. Lorenz, R.J. Chicotka, et al.
Solid State Communications