Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY
- S.N. Mohammad
- G. Fiorenza
- et al.
- 1995
- Solid State Electronics
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3 results for R.L. Carter
Mobility-diffusivity relationship for degenerate semiconductors under mechanical stress
- S. Noor Mohammad
- Ronald L. Carter
- 1995
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors
- S. Noor Mohammad
- Andrew V. Bemis
- et al.
- 1993
- Solid State Electronics