Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY
- S.N. Mohammad
- G. Fiorenza
- et al.
- 1995
- Solid State Electronics
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7 results for S.Noor Mohammad
Mobility-diffusivity relationship for degenerate semiconductors under mechanical stress
- S. Noor Mohammad
- Ronald L. Carter
- 1995
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
New generalization of dielectric screening in electronic devices with heavily doped semiconductor region(S) I. Treatment for the quasi-neutral bulk region
- S. Noor Mohammad
- 1993
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors
- S. Noor Mohammad
- Andrew V. Bemis
- et al.
- 1993
- Solid State Electronics
Solution of a nonlinear Poissons equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method
- S. Noor Mohammad
- 1992
- Physical Review B
Unified model for drift velocities of electrons and holes in semiconductors as a function of temperature and electric field
- S.Noor Mohammad
- 1992
- Solid State Electronics
The Einstein Relation for Degenerate Semiconductor; with Nonuniform Band Structures
- S. Noor Mohammad
- Andrew V. Bemis
- 1992
- IEEE T-ED