Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Temperature dependent transport through strained Si/SiGe hole resonant tunneling diodes has been studied. A quantitative measure of the different current components due to the conduction through the light hole and heavy hole resonant states at any particular bias and temperature has been obtained, and energy values for states in the SiGe well have been extracted. We also show that the quenching of the negative differential resistance at room temperature in hole resonant tunneling diodes is due to thermally assisted tunneling through higher resonant states.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Mark W. Dowley
Solid State Communications
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films