Systematic multiple filament statistical methodology using a successive varying-voltage technique for series resistance effect in post-breakdown (forming) characterization

Abstract

Rather than commonly assumed single spot breakdown (BD) growth, a successive varying-voltage stress methodology is developed to investigate multiple BD (or filaments) statistics for realistic applications where series-resistance can play an important role in post BD regime. In these situations, classical successive BD theory is not applicable in the characterization of post BD current-transients. We found an appreciable occurrence of successive BD events at lower percentile even with voltage drop although their occurrence is generally delayed. This methodology is generic for any dielectrics or thickness range and most relevant for on-chip decoupling capacitor applications and for better understanding forming process in ReRAM devices.