Publication
Physical Review Letters
Paper

Surface reconstruction on Al(100) and Al(110) surfaces

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Abstract

Al surfaces grown epitaxially on GaAs(100) substrates exhibit a nearly atomically smooth surface morphology which permits the formation of various clean and impurity-induced surface reconstructions. The Al(100)-c(2×2) reconstruction can be ascribed to a two-dimensional Fermi-surface instability. Arguments are given that suggest a charge-density-wave mechanism. © 1981 The American Physical Society.

Date

21 Sep 1981

Publication

Physical Review Letters

Authors

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