Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
In the presence of metallic states, deposition-generated midgap levels at the semiconductor surface evolve into resonances that accommodate the fractional charge density that ultimately determines the Fermi level and hence the Schottky-barrier height. This concept is applied to calculate both the barrier heights of GaAs for nonalloyed metal-semiconductor interfaces, and the index-of-interface behavior for 15 tetrahedrally coordinated semiconductors. © 1989 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
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