Surface processes in plasma-assisted etching

Abstract

A discussion will be presented of the mechanistic understanding of surface chemistry in plasma-assisted etching environments. The role of energetic ion bombardment and the importance of the neutral radical-to-ion flux ratio will be emphasized. Most of the data to be presented is obtained from well controlled beam experiments designed to simulate plasma conditions. The fluorine-silicon system has been studied more thoroughly than other gas-solid combinations and will be used to illustrate the phenomena of greatest importance.