Y. Kato, Y. Nakagawa, et al.
EURODISPLAY 2002
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Related
D.J. Webb, J. Fompeyrine, et al.
Microelectronic Engineering
Conference paper
Temperature stability of AuGeNi ohmic contacts to GaAs
A.C. Callegari, M. Murakami, et al.
ESSDERC 1987
Conference paper
Dual work function metal gate CMOS using CVD metal electrodes
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004