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VLSI Technology 2006
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
S. Zafar, Y.-H. Kim, et al.
VLSI Technology 2006
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
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IEDM 2004
A.C. Callegari, M. Murakami, et al.
ESSDERC 1987