Conference paper
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
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CS MANTECH 2007
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
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