About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Paper
SUMMARY ABSTRACT: CHARACTERISTICS OF ORGANOSILICON POLYMERS IMMERSED IN GASEOUS PLASMAS.
Abstract
Data are presented which show the effect of various plasmas upon the etch rate of a small sampling of organosilicon polymers. It is not intended to be definitive, but is intended to show general trends of the effect of structure upon the resistance of etching in these plasmas, and may give an insight into the mechanism by which these materials erode when exposed to various species produced in these plasmas. These polymers are of interest for multilayer lithography.