Marco Bellini, Peng Cheng, et al.
SPIE International Symposium on Fluctuations and Noise 2007
The modulation of the currents in a symmetric Semiconductor-on-Insulator (SOI) lateral bipolar transistor with a voltage applied to the SOI substrate is studied. For an n-p-n transistor, a positive substrate bias could greatly increase the collector current, especially at low values, while having relatively little effect on the base current. Similarly, a negative substrate bias could greatly increase the collector current of a p-n-p transistor. The physical mechanisms responsible for the modulation effects are discussed. The potential of using substrate bias to enhance the performance of symmetric SOI lateral bipolar circuits is briefly discussed.
Marco Bellini, Peng Cheng, et al.
SPIE International Symposium on Fluctuations and Noise 2007
Jeng-Bang Yau, Jin Cai, et al.
IEEE J-EDS
Jeng-Bang Yau, Joonah Yoon, et al.
BCTM 2016
Keith A. Jenkins, Eduard Cartier, et al.
IEEE Electron Device Letters