Keunwoo Kim, Hussein I. Hanafi, et al.
VLSI Technology 2005
We report partially depleted silicon-on-insulator p-channel field-effect transistors fabricated with a 32-nm-technology ground rule and featuring SiGe raised source/drain, SiGe channel, and implant-free extension formation process. A respectable drive current of 950 μAm is obtained at an off current of 100 nAμm, VDD = 1V, and a contacted gate pitch of 130 nm. Furthermore, when the transistor width is scaled down to 100 nm, the saturation transconductance increases by about 15%, leading to a drive current of 1100 μAm. © 2006 IEEE.
Keunwoo Kim, Hussein I. Hanafi, et al.
VLSI Technology 2005
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VLSI-TSA 2003
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