We present the first comprehensive study of symmetric lateral bipolar transistors built on Semiconductor-On-Insulator (S-OI) wafers with CMOS-like process. Record-high IC > 3 mA/μm is demonstrated. Reduced voltage operation can be achieved with small-bandgap semiconductor materials such as SiGe and Ge. Base current analysis and emitter engineering provide understanding of device physics and pathways to performance optimization. Simulation studies suggest fmax > 1 THz is achievable, and BVCEO can be greatly increased in a stacked configuration.