Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning tunneling microscopy

We report results, from scanning tunneling microscopy, on the initial phase of oxygen adsorption on p-type GaAs(110) surfaces. High-resolution measurements show that atomic oxygen is bonded in an interchain bridging position. The results on p-type material show no evidence for band bending and are in marked contrast to previous results observed on n-type GaAs(110) surfaces. © 1987 The American Physical Society.