J.A. Barker, D. Henderson, et al.
Molecular Physics
The conductance of Si MOSFETs of submicrometer dimensions was studied as a function of source-drain voltage. Aperiodic structure was observed in the conductance as the gate voltage and magnetic field were varied. This structure was found to depend on the polarity of the source-drain voltage. The structure in the rectified portion (antisymmetric part) of the conductance was observed to have a magnetic field scale similar to that of the symmetric part. The magnitude of this structure (relative to the symmetric conductance structure) increased linearly at first, then sublinearly, with increasing source-drain voltage, as is predicted by the existing theories of conductance fluctuations due to quantum interference. © 1987.
J.A. Barker, D. Henderson, et al.
Molecular Physics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications