Nucleation of dislocations in SiGe layers
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993
We report on strain and stability measurements on pseudomorphic Si 1-yCy/Si1-xGex superlattices which are synthesized by solid source molecular beam epitaxy on silicon (100) substrate. The strain in the superlattices alternates between tensile and compressive in the individual Si1-yCy and Si 1-xGex alloy layers, respectively. A symmetrical strain distribution can be achieved directly on silicon by adjusting the carbon and the germanium content and/or the thickness of the individual layers. X-ray diffraction and transmission electron microscopy are applied to investigate the structural properties and the thermal stability.
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993
D.A. Grützmacher, T.O. Sedgwick, et al.
Applied Physics Letters
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989
P. Fahey, Subramanian S. Iyer, et al.
Applied Physics Letters