Novel IC sub-threshold IDDQ signature and its relationship to aging during high voltage stress

Abstract

A sub-threshold quiescent current (IDDQ) signature is observed for the first time. 14 nm SOI Ring Oscillators (ROs) are used to study a characteristic knee/peak for different device types and threshold voltages undergoing different stress conditions. The relationship of the sub-threshold IDDQ characteristics to process variability and aging are explained with detailed circuit level simulations. This novel signature has potential applications for reliability analysis and aged/used chip detection.