Spin-transfer induced switching in magnetic nanopillars
Jonathan Z. Sun
ICMENS 2006
Spin-transfer-induced magnetic excitation in large magnetic field applied perpendicular to the thin film junction surface reveals both a current threshold Ic and a voltage threshold. The current threshold follows the Slonczewski-type of magnetic field dependence [J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996)]. The voltage step at Ic is ΔV which appears to scale with the applied field with a prefactor of the order of 2 μB e, suggesting a threshold to magnetic excitation. Furthermore, experimentally it is observed that ΔV≈ Ic δR, where δR is the magnetoreistance between the parallel and the antiparallel states. This apparent coincidence can be unified when one includes the effect of spin-pumping-related nonlocal damping. The spin-pump damping relates magnetic instability threshold Ic to δR, producing (d Ic dH) δR that is about 2 μB e, explaining the origin of the coincidence. © 2005 American Institute of Physics.
Jonathan Z. Sun
ICMENS 2006
Jonathan Z. Sun, R.P. Robertazzi, et al.
DRC 2011
Martin J. Gajek, J. Nowak, et al.
Applied Physics Letters
Sadamichi Maekawa, Jonathan Z. Sun
AIP Advances