Martin J. Gajek, J. Nowak, et al.
Applied Physics Letters
We examine room temperature current-voltage (IV) characteristics of CoFeB|MgO|CoFeB type of perpendicularly magnetized tunnel junctions developed for memory applications. From their nonlinear bias voltage dependence, a conductance "cross-scaling"is seen that is consistent with the involvement of inelastic spin-flip scattering in electrodes. A phenomenological model is constructed that connects the parameters of spin-flip scatter-related inelastic events with both magnetoresistance and spin-transfer torque. The model provides measurable, electrode-specific properties such as interface exchange stiffness as it affects spin-torque performance.
Martin J. Gajek, J. Nowak, et al.
Applied Physics Letters
Raphael P. Robertazzi, J. J. Nowak, et al.
IEEE ITC 2014
Christopher Safranski, Jan Kaiser, et al.
Nano Letters
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions