Abstract
Thin films of ReSi2 were prepared by the co-evaporation of rhenium and silicon. The structure of the films is compared with the previously reported structure of this compound. The resistivity and Hall coefficient of the films were measured from 4.2 K to 523 K. Optical transmission measurements were also carried out. The films display semiconducting properties (p-type) characteristic of a small band gap, in agreement with measurements reported for bulk and single-crystal samples. The discrepancy between these results and recent band calculations, indicating a potentially high conductivity, is briefly discussed. © 1988.