About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-ED
Paper
Silicon charge electrode array for ink jet printing
Abstract
A monolithic charge electrode array suitable for use in a multiple channel ink jet printing apparatus has been fabricated by anisotropic etching of trapezoidal slots through a (110) oriented silicon substrate. Each electrode in the array is a three-dimensional p-n diode formed by p+ diffusion of the surface and sidewalls of the etched slots. Electrical isolation between adjacent electrodes is achieved by appropriate biasing of the diodes. The devices are passivated by a layer of thermally grown SiO2. Printing has been demonstrated with a short array. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.