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IEEE JSSC
Paper

Design of Ion-Implanted MOSFET's With Very Small Physical Dimensions

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Abstract

This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1 μ,. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 μ were fabricated. and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected. Copyright © 1974 by The Institute of Electrical and Electronics Engineers, Inc.

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IEEE JSSC