PaperContinuous Stimulated Emission from GaAs Diodes at 77°KM.H. Pilkuhn, H. Rupprecht, et al.Proceedings of the IEEE
PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs LasersM.H. Pilkuhn, H. RupprechtProceedings of the IEEE
PaperPreparation and properties of solution-grown epitaxial p - N junctions in gapM.R. Lorenz, M.H. PilkuhnJournal of Applied Physics
