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Journal of Applied Physics
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High-energy light emission from junctions in GaAsxP 1-x diodes

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Abstract

Spontaneous and stimulated emission from junctions in diodes made of silicon-doped, melt-grown GaAsxP1-x alloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K. © 1964 The American Institute of Physics.

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Journal of Applied Physics

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