High-energy light emission from junctions in GaAs_xP _1-x diodes

Abstract

Spontaneous and stimulated emission from junctions in diodes made of silicon-doped, melt-grown GaAsxP1-x alloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K. © 1964 The American Institute of Physics.