Effect of temperature on the stimulated emission from GaAs p-n junctions

Abstract

The temperature dependence of the threshold current density was examined for a series of GaAs injection lasers with different lengths but otherwise identical structure. From a plot of threshold current density as a function of reciprocal length at constant temperature, the gain and loss factor can be calculated. The laser losses exhibit only a small temperature dependence in the range from 4·2 to 300°K. The reciprocal gain factor, however, has the same temperature dependence as the threshold current density jt. The detailed nature of the temperature dependence of jt does depend on the length of the laser and on the doping level in the active region. The influence of these two parameters is discussed and compared with theoretical predictions. © 1964.