Second-harmonic generation in centro-symmetric semiconductors

Abstract

The crystallographic dependence of optical-second-harmonic generation (SHG) in Si and Ge single crystals is obtained with 10 ps pulses at 527 nm and at incident fluences above the threshold for laser melting of the crystal lattice. We find that the experimentally observed dependence of SHG on crystal orientation remains unchanged up to the damage limit. Observed selection rules are analysed in terms of various possible contributions. © 1986 Società Italiana di Fisica.