H.J. Hovel
Solid-State Electronics
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
H.J. Hovel
Solid-State Electronics
F. Assaderaghi, G. Shahidi, et al.
VLSI Technology 1996
J. Woodall, H.J. Hovel
Applied Physics Letters
G.W. Mulvey, B.K. Ko, et al.
IEEE T-ED