Conference paper
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
D. Schepis, F. Assaderaghi, et al.
IEDM 1997
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.
D. Schepis, F. Assaderaghi, et al.
IEDM 1997
H.J. Hovel
IEEE T-ED
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
J. Woodall, H.J. Hovel
Solar Cells