D. Pohl, S.E. Schwarz, et al.
Physical Review Letters
The potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space-charge regions next to the heterojunction interface as well as the electron-hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.
D. Pohl, S.E. Schwarz, et al.
Physical Review Letters
D. Pohl, W. Denk, et al.
Applied Physics Letters
H. Hillmer, A. Forchel, et al.
Physical Review B
C. Harder, P. Buchmann, et al.
Electronics Letters