Scaling of gaas/algaas laser diodes for submilliampere threshold current

Abstract

GaAs/AlGaAs lasers grown by a single-step MBE on grooved substrates have been used to investigate the scaling of lasers for very low threshold current. By tuning the facet reflectivity and the laser length, to keep the photon lifetime constant, it has been possible to scale down the threshold current to 0.65 mA without changing the external efficiency. © 1989, The Institution of Electrical Engineers. All rights reserved.