C. Schönenberger, S.F. Alvarado, et al.
Journal of Applied Physics
Paper
Nanometer resolution in luminescence microscopy of III-V heterostructures
Abstract
In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
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