Nanometer resolution in luminescence microscopy of III-V heterostructures

D.L. Abraham; A. Veider; C. Schönenberger; H.P. Meier; D.J. Arent; S.F. Alvarado

doi:10.1063/1.103154

Applied Physics Letters

Paper

01 Dec 1990

Nanometer resolution in luminescence microscopy of III-V heterostructures

View publication

Abstract

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

Paper

Observation of single charge carriers by force microscopy

C. Schönenberger, S.F. Alvarado

Physical Review Letters

Paper

Understanding magnetic force microscopy

C. Schönenberger, S.F. Alvarado

Zeitschrift für Physik B Condensed Matter

Paper

Separation of magnetic and topographic effects in force microscopy

C. Schönenberger, S.F. Alvarado, et al.

Journal of Applied Physics

Paper

A differential interferometer for force microscopy

C. Schönenberger, S.F. Alvarado

Review of Scientific Instruments

View all publications

Abstract

Related

Observation of single charge carriers by force microscopy

Understanding magnetic force microscopy

Separation of magnetic and topographic effects in force microscopy

A differential interferometer for force microscopy