A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Temperature- (T) and frequency- dependent dielectric losses on Rb1-x(NH4)xH2PO 4 single crystals (RADP), and their deuterated isomorphs (D-RADP), can be collapsed to single curves with a scaling variable E(T). This applies for T sufficiently high that equilibrium is established within the sample-thermalization time. If E(T) follows the Vogel-Fulcher law, the scaling will depend only on the freezing temperature T0 and on the attempt frequency 0. For RADP, values in excellent agreement with a study covering a very broad frequency range are thus obtained, while significantly different values apply to D-RADP. © 1986 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
K.A. Chao
Physical Review B
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Imran Nasim, Melanie Weber
SCML 2024