P.M. Mooney, T.N. Theis, et al.
Journal of Electronic Materials
Paper
Resonant tunneling via X-point states in AlAs-GaAs-AlAs heterostructures
Abstract
We have observed resonant tunneling of electrons in AlAs-GaAs-AlAs heterostructures, via a quantum state localized in AlAs. The resonance manifests itself as a distinct feature in the current-voltage characteristics, at 4 K. The confined energy state arises from a potential profile derived from the X point of the Brillouin zone, in which AlAs behaves as a quantum well and GaAs as a barrier.
Related
H. Shen, Z. Hang, et al.
Superlattices and Microstructures
R.T. Collins, L. Viña, et al.
Superlattices and Microstructures
Y. Iye, E. Mendez, et al.
Physical Review B