Publication
Applied Physics Letters
Paper

Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures

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Abstract

Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single-barrier heterostructure due to the presence of a quasi-bound state associated with the X-point profile. This surprising result is due to the fact that although the Γ-point profile of this heterostructure is a simple single tunneling barrier, the X-point profile actually constitutes a quantum well some 0.3 eV deep lying about 0.2 eV above the Γ point of GaAs. The experimental evidence is a sharp cutoff in conductance at about 0.36 V bias, characteristic of tunneling via a confined state.

Date

01 Dec 1989

Publication

Applied Physics Letters

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