Publication
Applied Physics Letters
Paper

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

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Abstract

Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.

Date

01 Jan 1988

Publication

Applied Physics Letters

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