E. Mendez
Surface Science
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
E. Mendez
Surface Science
T.P. Smith III, W.I. Wang, et al.
Physical Review B
E. Mendez, L.L. Chang, et al.
Physical Review Letters
L. Via, R.T. Collins, et al.
Physical Review Letters