J.M. Hong, M.C. Wu, et al.
Applied Physics Letters
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
J.M. Hong, M.C. Wu, et al.
Applied Physics Letters
M. Tatham, R.A. Taylor, et al.
Solid State Electronics
L.F. Luo, R. Beresford, et al.
Applied Physics Letters
S.S. Bose, B. Lee, et al.
Journal of Applied Physics