Conference paper
Electronic properties of quantum wells in perturbing fields
R.T. Collins, L. Vina, et al.
Proceedings of SPIE 1989
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X AlAs-ΓGaAs discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
R.T. Collins, L. Vina, et al.
Proceedings of SPIE 1989
P.C. Van Son, F.P. Milliken, et al.
Surface Science
W.I. Wang, E. Mendez, et al.
Applied Physics Letters
E. Mendez, E. Calleja, et al.
Physical Review B