Publication
Applied Physics Letters
Paper

Resonant tunneling in semiconductor double barriers

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Abstract

Resonant tunneling of electrons has been observed in double-barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces. © 1974 American Institute of Physics.

Date

09 Oct 2003

Publication

Applied Physics Letters

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