R.J. Haug, H. Munekata, et al.
Surface Science
Periodic ultrathin layers of GaAs and AlAs with a few periods have been grown by molecular beam epitaxy under computer control. For such structures, x-ray scattering measurements at small angles show a series of principal and secondary interference peaks. The results are in good agreement with theoretical calculations, giving evidence to a degree of smoothness and coherency on the scale of atomic dimensions. Furthermore, the nonuniformity in thickness over a relatively large sample area is shown to be governed by the geometry of the growth system.
R.J. Haug, H. Munekata, et al.
Surface Science
M. Fritze, W. Chen, et al.
Surface Science
H. Sakaki, L.L. Chang, et al.
Solid State Communications
L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984