J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory. © 1986 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
R.A. Webb, S. Washburn, et al.
Physical Review Letters
K.N. Tu
Materials Science and Engineering: A
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry