F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
We report large logarithmic corrections to the conductivity of two-dimensional electrons and holes in GaSb-InAs-GaSb double heterostructures. From 40 mK to 1 K, the conductivity increased with the logarithm of the temperature but with a slope as much as 30 times larger than estimated from the theories of weak localization and carrier interaction. The discrepancy apparently results from electron-hole interactions not included in the theory. © 1986 The American Physical Society.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
A. Krol, C.J. Sher, et al.
Surface Science
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings