Aniruddha Konar, John Mathew, et al.
Nano Letters
In this brief, the random dopant fluctuation (RDF)-induced threshold voltage (VT) variability, on current (ION) variability, and VT mismatch in undoped channel Si gate-all-around (GAA) n-nanowire MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The RDFs are introduced in the Si NWFET tetrahedral device grid by a 3-D atomistic Monte-Carlo technique. The RDF due to discrete random dopants located in the source (S)/drain (D) extension and channel regions of Si GAA n-NWFET are found to impact the device characteristic variability. The numerical VT mismatch analysis and comparison with the Si n-NWFET total AVT measurement data from the literature reveal that RDF still plays a significant source for device random fluctuations in undoped channel Si GAA n-NWFETs. The numerical VT mismatch study indicates the fact that complete suppression of RDF induced device random variability in undoped channel fully depleted MOS devices is still going to be a challenge, as long as doped S/D regions are employed.
Aniruddha Konar, John Mathew, et al.
Nano Letters
Samarth Agarwal, Jeffrey B. Johnson, et al.
Journal of Computational Electronics
Siyu Koswatta, N. Mavilla, et al.
IEDM 2015
Samarth Agarwal, Terence B. Hook, et al.
IEEE T-ED