Yield estimation of SRAM circuits using "Virtual SRAM Fab"
Aditya Bansal, Rama N. Singh, et al.
ICCAD 2009
In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed. © 2007 IEEE.
Aditya Bansal, Rama N. Singh, et al.
ICCAD 2009
Chunjian Ni, Rajiv V. Joshi, et al.
ASME Electronic and Photonics Packaging Division 2007
Keunwoo Kim, Jerry G. Fossum, et al.
International Journal of Electronics
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices