M. Reiser, P. Wolf
Electronics Letters
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
M. Reiser, P. Wolf
Electronics Letters
H.P. Meier, E. Van Gieson, et al.
Journal of Crystal Growth
P. Wolf
Cryogenics
W. Baechtold, K. Daetwyler, et al.
Electronics Letters