P. Vettiger, M. Benedict, et al.
ISLC 1990
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
P. Vettiger, M. Benedict, et al.
ISLC 1990
K.E. Drangeid, S. Middlehock, et al.
IEEE T-ED
W. Baechtold, K. Daetwyler, et al.
Electronics Letters
E.O. Schulz-DuBois, P. Wolf
Applied Physics