P. Guéret, Th. O Mohr, et al.
IEEE Transactions on Magnetics
Paper
X AND Ku BAND GaAs M.E.S.F.E.T.
Abstract
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
Related
Conference paper
5. 2GHz MONOLITHIC GaAs OPTOELECTRONIC RECEIVER.
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
W. Baechtold, Th. Forster, et al.
Electronics Letters
S.V. Iyer, H.P. Meier, et al.
Applied Physics Letters