F.M. D'Heurle, S.-L. Zhang
Journal of Applied Physics
Tungsten silicide on polycrystalline Si becomes increasingly important as interconnections and gate electrodes for metal-oxide-semiconductor field-effect transistor(MOSFET) integrated circuits. Annealing behaviors of coevaporatd tungsten silicide on P-doped poly-Si are studied by x-ray diffraction, He +-backscattering, transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). High-temperature annealing of silicides results in crystallization and homogenization of tungsten silicide as well as phosphorus out-diffusion from the poly-Si. Their effect on device fabrication is also discussed.
F.M. D'Heurle, S.-L. Zhang
Journal of Applied Physics
P.-E. Hellberg, S.-L. Zhang, et al.
Journal of Applied Physics
L. Clevenger, B. Arcot, et al.
Journal of Applied Physics
O. Thomas, Steve Molis, et al.
Applied Surface Science