I. Ohdomari, K.N. Tu, et al.
Applied Physics Letters
Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p-type with a charge carrier density of the order of 4×1017 cm -3.
I. Ohdomari, K.N. Tu, et al.
Applied Physics Letters
S.R. Herd, P. Chaudhari, et al.
Journal of Non-Crystalline Solids
B.A. Scott, M.H. Brodsky, et al.
Applied Physics Letters
J.E.E. Baglin, F.M. D'Heurle, et al.
Nuclear Instruments and Methods