Publication
Journal of Applied Physics
Paper

IrSi1.75 a new semiconductor compound

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Abstract

Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p-type with a charge carrier density of the order of 4×1017 cm -3.