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Journal of Applied Physics
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Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate

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Abstract

Titanium interaction with phosphorus-doped polycrystalline silicon gate electrodes was investigated by cross-sectional transmission electron microscopy and correlated with sheet resistance measurements. Phosphorus concentration above 1×1016 ion/cm2 in the polycrystalline silicon leads to decreased TiSi2 formation, discontinuous metal silicide layer, and increased sheet resistance. A possible cause could be the formation of titanium phosphide at high phosphorus concentration in the polycrystalline silicon, competing with the total titanium available for silicide formation.

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Journal of Applied Physics

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