D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
State-of-the-art resist for 193 nm lithography are analyzed with respect to possible resolution, photospeed and etch resistance. This paper describes this photoresist design study and emphasizes the many opportunities and challenges that the photoresist and semiconductor industry face with the unfolding of this technology.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009