L.M. Foster
JES
Efficient red-emitting GaP diodes have been fabricated from p-on-n layers formed by liquid epitaxy in a closed-tube system. The external quantum efficiency may increase by a factor of two to three after the diodes are heat-treated. © 1968 The American Institute of Physics.
L.M. Foster
JES
A.A. Onton, M.R. Lorenz, et al.
Journal of Applied Physics
M.R. Lorenz
Physics Letters
A.A. Onton, M.R. Lorenz, et al.
Journal of Crystal Growth