Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics

Abstract

As the end of Si CMOS scaling is approaching, III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. We have reviewed the benefits, the opportunities, and the challenges of III-Vs for digital applications. We have also demonstrated functional enhancement-mode GaAs- , and InGaAs- channel MOSFETs, with high-j gate dielectrics. The results show promise for realizing III-V MOSFETs for future VLSI logic applications.